INNOVATION 3). “Light-emitting devices using indirect-transition-type semiconductors. These devices are based on the intrinsic nature of a DP that is contrary to V. Infrared light-emitting diodes using crystalline silicon (Si) have been realized. For their fabrication, a method of DP-assisted annealing has been invented to autonomously control the spatial distribution of the dopant atoms on which DPs are created and localized (Figure 1d).” (DP = dressed photon).
https://www.mdpi.com/2073-8994/12/8/1244/htm
linkedin post 2022-06-29 05:12:48
Nigel Fleming
September 21, 2022