linkedin post 2021-09-12 05:38:31

INNOVATION 3). “Light-emitting devices using indirect-transition-type semiconductors. These devices are based on the intrinsic nature of a DP that is contrary to V. Infrared light-emitting diodes using crystalline silicon (Si) have been realized. For their fabrication, a method of DP-assisted annealing has been invented to autonomously control the spatial distribution of the dopant atoms on which DPs are created and localized (Figure 1d).” (DP = dressed photon).

https://www.mdpi.com/2073-8994/12/8/1244/htm

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